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APTC60DAM18CTG
Boost chopper SiC FWD diode Super Junction MOSFET Power Module
VBUS VBUS SENSE NTC2
VDSS = 600V RDSon = 18m max @ Tj = 25C ID = 143A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features *
CR1
OUT Q2
*
Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated
G2
S2 0/VBU S NTC1
FWD SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
* * * *
OUT
G2 S2
VBUS
0/VBUS
OUT
VBUS SENSE
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS compliant Max ratings 600 143 107 572 30 18 833 20 1 1800 Unit V A V m W A mJ
July, 2006 1-7 APTC60DAM18CTG - Rev 3
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTC60DAM18CTG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V
Min Tj = 25C Tj = 125C 2.1
Typ
VGS = 10V, ID = 71.5A VGS = VDS, ID = 4mA VGS = 20 V, VDS = 0V
3
Max 100 1000 18 3.9 200
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 143A Inductive switching @ 125C VGS = 15V VBus = 400V ID = 143A R G = 1.2 Inductive switching @ 25C VGS = 15V, VBus = 400V ID = 143A, R G = 1.2 Inductive switching @ 125C VGS = 15V, VBus = 400V ID = 143A, R G = 1.2
Min
Typ 28 10.2 0.85 1036 116 444 21 30 283 84 1608 3920 2630 4824
Max
Unit nF
nC
ns
J
J
Chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance
Test Conditions VR=600V Tj = 25C Tj = 175C Tc = 125C Tj = 25C Tj = 175C
Min 600
Typ 0.5 1 100 1.6 2.0 140 650 500
Max 2 10 1.8 2.4
Unit V mA A V nC pF
July, 2006 2-7 APTC60DAM18CTG - Rev 3
IF = 100A
IF = 100A, VR = 300V di/dt =2400A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
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APTC60DAM18CTG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.15 0.28 150 125 100 4.7 160 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
SP4 Package outline (dimensions in mm)
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3-7
APTC60DAM18CTG - Rev 3
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
July, 2006
APTC60DAM18CTG
Typical CoolMOS Performance Curve
0.16 Thermal Impedance (C/W) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 800 700 ID, Drain Current (A) 600 500 400 300 200 100 0 0
5V 4.5V 4V 6.5V 6V 5.5V
Transfert Characteristics 540 I D, Drain Current (A)
VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle
VGS=15&10V
450 360 270 180 90 0
TJ=125C TJ=25C T J=-55C
5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current
25
0
1 2 3 4 5 6 VGS, Gate to Source Voltage (V)
7
RDS(on) Drain to Source ON Resistance
1.1
V GS=10V
DC Drain Current vs Case Temperature 160 I D, DC Drain Current (A) 240 140 120 100 80 60 40 20 0 25 50 75 100 125 TC, Case Temperature (C) 150
July, 2006 4-7 APTC60DAM18CTG - Rev 3
1.05 1 0.95 0.9 0
Normalized to VGS =10V @ 71.5A
V GS=20V
40
80
120
160
200
I D, Drain Current (A)
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APTC60DAM18CTG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) ON resistance vs Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
V GS=10V ID= 143A
Threshold Voltage vs Temperature 1.2
VGS(TH), Threshold Voltage (Normalized)
1000
I D, Drain Current (A)
limited by RDSon
1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C)
100
100s
1 ms
10
Single pulse TJ =150C TC=25C 1 10 100
10 ms
1 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage
VGS , Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage 100000
Ciss
14 12 10 8 6 4 2 0 0 200 400 600 800 Gate Charge (nC) 1000 1200
July, 2006
C, Capacitance (pF)
10000
Coss
ID=143A TJ=25C
VDS=120V V DS=300V VDS=480V
1000
Crss
100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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5-7
APTC60DAM18CTG - Rev 3
APTC60DAM18CTG
350 300
td(on) and td(off) (ns)
Delay Times vs Current 120
td(off)
Rise and Fall times vs Current
VDS=400V RG=1.2 T J=125C L=100H
100
tr and t f (ns)
250 200 150 100 50 0 0 40 80 120 160 200 240 ID, Drain Current (A) Switching Energy vs Current 10 9 8 7 6 5 4 3 2 1 0 0
VDS=400V RG=1.2 TJ=125C L=100H td(on) VDS=400V RG=1.2 TJ=125C L=100H
tf
80 60 40
tr
20 0 0 40 80 120 160 200 240 ID, Drain Current (A) Switching Energy vs Gate Resistance 20
Switching Energy (mJ)
V DS =400V ID=143A T J=125C L=100H
Switching Energy (mJ)
E off
15 10 5 0
Eoff
Eon
E on
40
80 120 160 200 ID, Drain Current (A)
240
0
2.5 5 7.5 10 Gate Resistance (Ohms)
12.5
Operating Frequency vs Drain Current 160 140
Frequency (kHz)
I DR, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage 1000
T J=150C
120 100 80 60 40 20 0 30
ZCS
100
TJ=25C
ZVS VDS=400V D=50% RG=1.2 T J=125C T C=75C
Hard switching
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V)
July, 2006
50 70 90 110 ID, Drain Current (A)
130
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6-7
APTC60DAM18CTG - Rev 3
APTC60DAM18CTG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 Thermal Impedance (C/W) 0.9 0.25 0.2 0.15 0.1 0.05 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0 0.00001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics
200
I F Forward Current (A)
TJ=25C
IR Reverse Current (A)
2000 TJ =175C 1500 TJ =125C 1000 500 0 200 TJ =75C TJ=25C
150 100 50 0 0 0.5
TJ =75C
TJ=175C TJ =125C
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
300 400 500 600 700 VR Reverse Voltage (V)
800
4000 C, Capacitance (pF) 3000
2000 1000 0 1
July, 2006 APTC60DAM18CTG - Rev 3
10 100 VR Reverse Voltage
1000
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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7-7

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